BC847BS Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose double transistor

BC847BS
NPN Multi-chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 200 mA.
Sourced from Process 07.
June 2007
Dual NPN Signal Transister
SC70-6
Mark: .1F
E2
B2
C1
C2
B1
Pin #1 ^E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
50
V_CES
Collector-Base Voltage
50
V_CEO
Collector-Emitter Voltage
45
V_EBO
Emitter-Base Voltage
6.0
I_C
Collector Current (DC)
100
T_J, T_STG Junction Temperature and Storage Temperature
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics * T_a = 25°C unless otherwise noted
Symbol
Characteristic
PD
R θ JA
Total Device Dissipation
Derate above 25℃
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Max
210
1.6
625
Units
V
V
V
V
mA
°C
Units
mW
mW/℃
℃/W
©2007 Fairchild Semiconductor Corporation
1
BC847BS Rev. A
www.fairchildsemi.com