BC846_11 Datasheet, PDF (1/5 Pages) Diotec Semiconductor – Surface Mount General Purpose Si-Epi-Planar Transistors

BC846 - BC850
NPN Epitaxial Silicon Transistor
April 2011
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
: BC846
: BC847/850
: BC848/849
80
V
50
V
30
V
V_CEO
Collector-Emitter Voltage : BC846
: BC847/850
: BC848/849
65
V
45
V
30
V
V_EBO Emitter-Base Voltage
: BC846/847
: BC848/849/850
6
V
5
V
I_C Collector Current (DC)
100
mA
P_C Collector Power Dissipation
310
mW
T_J Junction Temperature
150
°C
T_STG Storage Temperature
-65 to 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_CBO Collector Cut-off Current
V_CB=30V, I_E=0
h_FE DC Current Gain
V_CE=5V, I_C=2mA
V_CE (sat) Collector-Emitter Saturation Voltage I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
V_BE (sat) Collector-Base Saturation Voltage I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
V_BE (on) Base-Emitter On Voltage
V_CE=5V, I_C=2mA
V_CE=5V, I_C=10mA
f_T
Current Gain Bandwidth Product V_CE=5V, I_C=10mA, f=100MHz
C_ob Output Capacitance
V_CB=10V, I_E=0, f=1MHz
C_ib Input Capacitance
V_EB=0.5V, I_C=0, f=1MHz
NF Noise Figure
: BC846/847/848
: BC849/850
V_CE= 5V, I_C= 200μA
R_G=2KΩ, f=1KHz
: BC849
: BC850
V_CE= 5V, I_C= 200μA
R_G=2KΩ, f=30~15000Hz
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Min.
110
580
Typ.
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
Max.
15
800
250
600
700
720
6
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
10
dB
4
dB
4
dB
3
dB
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
1
www.fairchildsemi.com