BC846 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistors

BC846/847/848/849/850
NPN EPITAXIAL
SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Suitable for automatic insertion in thick and thin-film circuits
• LOW NOISE: BC849, BC850
• Complement to BC856 ... BC860
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Unit
Collector Base Voltage
: BC846
: BC847/850
: BC848/849
Collector Emitter Voltage
: BC846
: BC847/850
: BC848/849
Emitter-Base Voltage
: BC846/847
: BC848/849/850
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
80
V
50
V
30
V
65
V
45
V
30
V
6
V
5
V
100
mA
310
mW
150
°C
-65 ~ 150
°C
SOT-23
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance
Noise Figure
: BC846/847/848
: BC849/850
: BC849
: BC850
ICBO
hFE
VCE (sat)
VBE (sat)
VBE (on)
fT
CCBO
CEBO
NF
NF
VCB=30V, IE=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
f=100MHz
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
VCE=5V, IC=200µA
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA
RG=2KΩ
f=30~15000Hz
hFE CLASSIFICATION
Classification
A
B
C
Min
110
580
Typ
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
Max
15
800
250
600
700
720
6
10
4
4
3
Unit
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB
hFE
110-220
200-450
420-800
MARKING CODE
TYPE 846A 846B 846C 847A 847B 847C 848A 848B 848C 849A 849B 849C 850A 850B 850C
MARK 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC
©1999 Fairchild Semiconductor Corporation
Rev. B