BC846-06 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

BC846- BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: BC846
: BC847/850
: BC848/849
V_CEO
Collector-Emitter Voltage : BC846
: BC847/850
: BC848/849
V_EBO
Emitter-Base Voltage
: BC846/847
: BC848/849/850
I_C
Collector Current (DC)
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_CBO
h_FE
V_CE (sat)
V_BE (sat)
V_BE (on)
f_T
Collector Cut-off Current
V_CB=30V, I_E=0
DC Current Gain
V_CE=5V, I_C=2mA
Collector-Emitter Saturation Voltage I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
Collector-Base Saturation Voltage I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
Base-Emitter On Voltage
V_CE=5V, I_C=2mA
V_CE=5V, I_C=10mA
Current Gain Bandwidth Product
V_CE=5V, I_C=10mA,
f=100MHz
C_ob
Output Capacitance
C_ib
Input Capacitance
NF
Noise Figure
: BC846/847/848
: BC849/850
: BC849
: BC850
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
V_CB=10V, I_E=0, f=1MHz
V_EB=0.5V, I_C=0, f=1MHz
V_CE= 5V, I_C= 200µA
R_G=2KΩ, f=1KHz
V_CE= 5V, I_C= 200µA
R_G=2KΩ, f=30~15000Hz
Min.
110
580
August 2006
tm
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
80
50
30
65
45
30
6
5
100
310
150
-65 ~ 150
Units
V
V
V
V
V
V
V
V
mA
mW
°C
°C
Typ.
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
Max.
15
800
250
600
700
720
6
10
4
4
3
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB
©2006 Fairchild Semiconductor Corporation
1
BC846- BC850 Rev. B
www.fairchildsemi.com