BC81825MTF Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

BC817/BC818
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC807/ BC808
November 2006
tm
3
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
: BC817
50
: BC818
30
V_CEO
Collector-Emitter Voltage
: BC817
45
: BC818
25
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current (DC)
800
P_C
Collector Power Dissipation
310
T_J
Junction Temperature
150
T_STG
Storage Temperature
-65 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics* T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
Collector-Emitter Breakdown Voltage
: BC817
: BC818
I_C=10mA, I_B=0
BV_CES
Collector-Emitter Breakdown Voltage
: BC817
: BC818
I_C=0.1mA, V_BE=0
BV_EBO
I_CES
I_EBO
h_FE1
h_FE2
V_CE (sat)
V_BE (on)
f_T
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
I_E=0.1mA, I_C=0
V_CE=25V, V_BE=0
V_EB=4V, I_C=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=300mA
I_C=500mA, I_B=50mA
V_CE=1V, I_C=300mA
V_CE=5V, I_C=10mA
f=50MHz
C_ob
Output Capacitance
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
V_CB=10V, f=1MHz
Min.
45
25
50
30
5
100
60
Typ.
100
Max.
100
100
630
0.7
1.2
12
Units
V
V
V
V
V
nA
nA
V
V
MHz
pF
©2006 Fairchild Semiconductor Corporation
1
BC817/BC818 Rev. B
www.fairchildsemi.com