BC817 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor

BC817/BC818
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Suitable for AF-Driver stages and low power output stages
• Complement to BC807/BC808
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Unit
Collector Emitter Voltage
Collector Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
: BC817
: BC818
: BC817
: BC818
VCES
VCEO
VEBO
IC
PC
TJ
TSTG
50
V
30
V
45
V
25
V
5
V
800
mA
310
mW
150
°C
-65 ~ 150
°C
SOT-23
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
BVCEO
IC=10mA, IB=0
BVCES
IC=0.1mA, IB=0
BVEBO
ICES
IEBO
hFE1
hFE2
VCE (sat)
VBE (on)
fT
CCBO
IE=0.1mA, IC=0
VCE=25V, IB=0
VEB=4V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=300mA
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCE=5V, IC=10mA
f=50MHz
VCB=10V, f=1MHz
hFE CLASSIFICATION
Classification
16
25
40
hFE1
100-250
160-400
250-630
hFE2
60-
100-
170-
Min Typ Max Unit
45
V
25
V
50
V
30
V
5
V
100 nA
100 nA
100
630
60
0.7
V
1.2
V
100
MHz
12
pF
MARKING CODE
TYPE
817-16
MARKING
8FA
817-25
8FB
817-40
8FC
818-16
8GA
818-25
8GB
818-40
8GC
©1999 Fairchild Semiconductor Corporation
Rev. B