BC80725MTF Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Suitable for AF-Driver stages and low power output stages

BC807/BC808
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CES
Collector-Emitter Voltage
: BC807
: BC808
V_CEO
Collector-Emitter Voltage
: BC807
: BC808
V_EBO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
Collector-Emitter Breakdown Voltage
: BC807
: BC808
I_C= -10mA, I_B=0
BV_CES
Collector-Emitter Breakdown Voltage
: BC807
: BC808
I_C= -0.1mA, V_BE=0
BV_EBO
I_CES
I_EBO
h_FE1
h_FE2
V_CE (sat)
V_BE (on)
f_T
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
I_E= -0.1mA, I_C=0
V_CE= -25V, V_BE=0
V_EB= -4V, I_C=0
V_CE= -1V, I_C= -100mA
V_CE= -1V, I_C= -300mA
I_C= -500mA, I_B= -50mA
V_CE= -1V, I_C= -300mA
V_CE= -5V, I_C= -10mA
f=50MHz
C_ob
Output Capacitance
V_CB= -10V, f=1MHz
3
2
1 ^SOT-23
1. Base 2. Emitter 3. Collector
Value
-50
-30
-45
-25
-5
-800
-310
150
-65 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Min.
-45
-25
-50
-30
-5
100
60
Typ.
100
Max. Units
V
V
V
V
V
-100
nA
-100
nA
630
-0.7
V
-1.2
V
MHz
12
pF
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002