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| BC63916 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Switching and Amplifier Applications | |||
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BC63916
Switching and Amplifier Applications
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCER
Collector-Emitter Voltage at RBE=1Kâ¦
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PC
Collector Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
⢠PW=5ms, Duty Cycle=10%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(on)
fT
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Test Condition
IC = 100µA, IE = 0
IC = 10mA, IB = 0
IE = 10µA, IC = 0
VCB = 30V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 5mA
VCE = 2V, IC = 150mA
VCE = 2V, IC = 500mA
IC = 500mA, IB = 50mA
VCE = 2V, IC = 500mA
VCE = 5V, IC=10mA,
f = 50MHz
1
TO-92
1. Emitter 2. Collector 3. Base
Value
100
100
80
5
1
1
-55 ~ 150
Units
V
V
V
V
A
W
°C
Min.
100
80
5.0
25
100
25
Typ.
100
Max.
100
10
Units
V
V
V
nA
µA
250
0.5
V
1
V
MHz
©2003 Fairchild Semiconductor Corporation
Rev. A, January 2003
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