BC638_05 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

BC638
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC637
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CER
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Collector-Emitter Voltage at R_BE=1KΩ
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE (sat)
V_BE (on)
f_T
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
I_C= -10mA, I_B=0
V_CB= -30V, I_E=0
V_EB= -5V, I_C=0
V_CE= -2V, I_C= -5mA
V_CE= -2V, I_C= -150mA
V_CE= -2V, I_C= -500mA
I_C= -500mA, I_B= -50mA
V_CE= -2V, I_C= -500mA
V_CE= -5V, I_C= -10mA,
f=50MHz
Value
-60
-60
-60
-5
-1
-1.5
-100
1
150
-65 ~ 150
Units
V
V
V
V
A
A
mA
W
°C
°C
Min.
-60
25
40
25
Typ.
100
Max.
-0.1
-0.1
Units
V
µA
µA
160
-0.5
V
-1
V
MHz
©2005 Fairchild Semiconductor Corporation
1
BC638 Rev. C2
www.fairchildsemi.com