BC636_09 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Switching and Amplifier Applications

BC636
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC635
March 2009
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CER
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Collector-Emitter Voltage at R_BE=1KΩ
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE (sat)
V_BE (on)
f_T
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
I_C= -10mA, I_B=0
V_CB= -30V, I_E=0
V_EB= -5V, I_C=0
V_CE= -2V, I_C= -5mA
V_CE= -2V, I_C= -150mA
V_CE= -2V, I_C= -500mA
I_C= -500mA, I_B= -50mA
V_CE= -2V, I_C= -500mA
V_CE= -5V, I_C= -10mA,
f=50MHz
Value
-45
-45
-45
-5
-1
-1.5
-100
1
150
-65 ~ 150
Units
V
V
V
V
A
A
mA
W
°C
°C
Min.
-45
25
40
25
Typ.
100
Max.
-0.1
-10
Units
V
μA
μA
250
-0.5
V
-1
V
MHz
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
1
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