BC636 Datasheet, PDF (1/3 Pages) Motorola, Inc – High Current Transistors

BC636/638/640
PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Complement to BC635/637/639
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Unit
Collector Emitter Voltage
at RBE=1Kohm
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
: BC636
: BC638
: BC640
: BC636
: BC638
: BC640
: BC636
: BC638
: BC640
VCER
VCES
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
-45
V
-60
V
-100
V
-45
V
-60
V
-100
V
-45
V
-60
V
-80
V
-5
V
-1
A
-1.5
A
-100
mA
1
W
150
°C
-65 ~ 150
°C
TO-92
1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Min
Collector-Emitter Breakdown Voltage BVCEO
IC= -10mA, IB=0
: BC636
-45
: BC638
-60
: BC640
-80
Collector Cut-off Current
ICBO
VCB= -30V, IE=0
Emitter Cut-off Current
IEBO
VEB= -5V, IC=0
DC Current Gain
hFE
VCE= -2V, IC= -5mA
25
: BC635
VCE= -2V, IC= -150mA
40
: BC637/BC639
40
VCE= -2V, IC= -500mA
25
Collector Emitter Saturation Voltage V_CE (sat) _{IC= -500mA, IB= -50mA}
Base Emitter On Voltage
VBE (on)
VCE= -2V, IC= -500mA
Current Gain Bandwidth Product
fT
VCE= -5V, IC= -10mA, f=50MHz
Typ
100
Max
-0.1
-0.1
250
160
-0.5
-1
Unit
V
V
V
µA
µA
V
V
MHz
©1999 Fairchild Semiconductor Corporation
Rev. B