BC635 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Current Transistors

BC635/637/639
Switching and Amplifier Applications
• Complement to BC636/638/640
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CER
Collector-Emitter Voltage at R_BE=1KΩ
: BC635
: BC637
: BC639
V_CES
Collector-Emitter Voltage
: BC635
: BC637
: BC639
V_CEO
Collector-Emitter Voltage
: BC635
: BC637
: BC639
V_EBO
Emitter-Base Voltage
I_C
Collector Current
I_CP
Peak Collector Current
I_B
Base Current
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
• PW=5ms, Duty Cycle=10%
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
Collector-Emitter Breakdown Voltage
: BC635
: BC637
: BC639
I_C=10mA, I_B=0
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(sat)
V_BE(on)
f_T
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: All
: BC635
: BC637/BC639
: All
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V_CB=30V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=5mA
V_CE=2V, I_C=150mA
V_CE=2V, I_C=500mA
I_C=500mA, I_B=50mA
V_CE=2V, I_C=500mA
V_CE=5V, I_C=10mA,
f=50MHz
©2002 Fairchild Semiconductor Corporation
1
TO-92
1. Emitter 2. Collector 3. Base
Value
45
60
100
45
60
100
45
60
80
5
1
1.5
100
1
150
-65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
Min.
45
60
80
25
40
40
25
Typ.
100
Max. Units
V
V
V
0.1
µA
0.1
µA
250
160
0.5
V
1
V
MHz
Rev. B2, December 2002