BC559BTA Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

BC556/557/558/559/560
PNP Epitaxial Silicon Transistor
October 2012
Features
• Switching and Amplifier
• High Voltage: BC556, V_CEO = -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
V_CEO
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
V_EBO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a = 25C unless otherwise noted
Symbol
I_CBO
h_FE
V_CE(sat)
V_BE(sat)
Parameter
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Volt-
age
Collector-Base Saturation Voltage
V_BE(on) Base-Emitter On Voltage
f_T
Current Gain Bandwidth Product
C_ob Output Capacitance
NF Noise Figure : BC556/557/558
: BC559/560
: BC559
: BC560
Test Condition
V_CB= -30V, I_E=0
V_CE= -5V, I_C=2mA
I_C= -10mA, I_B= -0.5mA
I_C= -100mA, I_B= -5mA
I_C= -10mA, I_B= -0.5mA
I_C= -100mA, I_B= -5mA
V_CE= -5V, I_C= -2mA
V_CE= -5V, I_C= -10mA
V_CE= -5V, I_C= -10mA,
f=10MHz
V_CB= -10V, I_E=0, f=1MHz
V_CE= -5V, I_C= -200A
f=1KHz, R_G=2K
V_CE= -5V, I_C= -200A
R_G=2Kf=30~15000MHz
h_FE Classification
Classification
h_FE
A
110 ~ 220
B
200 ~ 450
Value
-80
-50
-30
-65
-45
-30
-5
-100
500
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
C
C
Min.
110
-600
Typ.
-90
-250
-700
-900
-660
150
Max.
-15
800
-300
-650
-750
-800
Units
nA
mV
mV
mV
mV
mV
mV
MHz
6
pF
2
10
dB
1
4
dB
1.2
4
dB
1.2
2
dB
C
420 ~ 800
© 2012 Fairchild Semiconductor Corporation
BC556/557/558/559/560 Rev. B0
1
www.fairchildsemi.com