BC550CBU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Switching and Applications

BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, V_CEO=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage : BC546
: BC547/550
: BC548/549
V_CEO
Collector-Emitter Voltage : BC546
: BC547/550
: BC548/549
V_EBO
Emitter-Base Voltage : BC546/547
: BC548/549/550
I_C
P_C
T_J
T_STG
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
TO-92
1. Collector 2. Base 3. Emitter
Value
80
50
30
65
45
30
6
5
100
500
150
-65 ~ 150
Units
V
V
V
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_CBO
h_FE
V_CE (sat)
V_BE (sat)
V_BE (on)
f_T
C_ob
C_ib
NF
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
: BC546/547/548
: BC549/550
: BC549
: BC550
V_CB=30V, I_E=0
V_CE=5V, I_C=2mA
I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
V_CE=5V, I_C=2mA
V_CE=5V, I_C=10mA
V_CE=5V, I_C=10mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_EB=0.5V, I_C=0, f=1MHz
V_CE=5V, I_C=200µA
f=1KHz, R_G=2KΩ
V_CE=5V, I_C=200µA
R_G=2KΩ, f=30~15000MHz
h_FE Classification
Classification
h_FE
A
110 ~ 220
B
200 ~ 450
Min.
110
580
Typ.
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
Max.
15
800
250
600
700
720
6
10
4
4
3
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB
C
420 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002