BC517 Datasheet, PDF (1/3 Pages) Motorola, Inc – Darlington Transistors

BC517
NPN Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 1.0A.
• Sourced from process 05.
January 2005
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CEO
V_CBO
V_EBO
I_C
T_J, T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.
Value
30
40
10
1.2
-55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V_(BR)CEO
Collector-Emitter Breakdown Voltage *
V_(BR)CBO
Collector-Base Breakdown Voltage
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_CBO
Collector Cut-off Current
On Characteristics *
h_FE
V_CE(sat)
V_BE(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Conditions
I_C = 2.0mA, I_B = 0
I_C = 10µA, I_E = 0
I_E = 100nA, I_C = 0
V_CB = 30V, I_E = 0
V_CE = 2.0V, I_C = 20mA
I_C = 100mA, I_B = 0.1mA
I_C = 10mA, V_CE = 5.0V
Min.
30
40
10
30,000
Thermal Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
P_D
R_θJC
R_θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
625
5.0
83.3
200
Units
V
V
V
A
°C
Max Units
V
V
V
100
nA
1
V
1.4
V
Units
mW
mW/°C
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
BC517 Rev. A
www.fairchildsemi.com