BC516_D27Z Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Darlington Transistor

BC516
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high
current gain at currents to 1mA.
• Sourced from process 61.
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_CEO
V_CBO
V_EBO
I_C
P_D
T_J, T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Total Power Dissipation T_A = 25°C
Operating and Storage Junction Temperature Range
1
TO-92
1. Collector 2. Base 3. Emitter
Value
30
40
10
1
625
-55 ~ +150
Units
V
V
V
A
mW
°C
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
V_CEO
V_CBO
V_EBO
I_CBO
h_FE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
I_C = 2mA, I_B = 0
I_C = 100µA, I_E = 0
I_E = 10µA, I_C = 0
V_CB = 30V, I_E = 0
I_C = 20mA, V_CE = 2V
30
40
10
30,00
0
V
V
V
100 nA
V_CE(sat)
V_BE(on)
f_T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product (2)
I_C = 100mA, I_B = 0.1mA
I_C = 10mA, V_CE = 5V
I_C = 10mA, V_CE = 5V, f = 100MHz
1
V
1.4 V
200
MHZ
NOTES:
1. Pulse Test Pulse Width ≤ 2%
2. f_T = Ih_feI · f_test
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Max.
200
83.3
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002