BC337A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN Medium Power Transistor

BC337A
NPN Medium Power Transistor
• This device is designed for general purpose amplifier application at collector currents to 800mA.
• Sourced from process 38.
September 2007
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
V_CEO
V_CES
V_EBO
I_C
T_J, T_STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Value
60
60
5
800
-55 ~ 150
Units
V
V
V
mA
°C
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
BV_CES
BV_EBO
I_EBO
I_CBO
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
I_C = 10mA
I_C = 100μA
I_E = 100μA
V_EB = 5V
V_CB = 20V, T = 25 °C
T = 150 °C
h_FE
V_CE(sat)
V_BE(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V_CE = 1V, I_C = 100mA
V_CE = 1V, I_C = 500mA
I_C = 500 mA, I_B = 50 mA
V_CE = 5V, I_C = 2mA
Min.
60
60
5
100
40
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.These ratings are based on a maximum junction temperature of 150degrees C.
Typ.
400
Max.
10
0.1
5
0.7
1.2
Units
V
V
V
μA
μA
V
V
© 2007 Fairchild Semiconductor Corporation
BC337A Rev. 1.0.0
1
www.fairchildsemi.com