BC33725BU Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

October 2014
BC337 / BC338
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC327 / BC328
1
TO-92
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number
BC33716BU
BC33716TA
BC33716TFR
BC33725BU
BC33725TA
BC33725TAR
BC33725TF
BC33725TFR
BC33740BU
BC33740TA
BC33825TA
Top Mark
BC33716
BC33716
BC33716
BC33725
BC33725
BC33725
BC33725
BC33725
BC33740
BC33740
BC33825
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Tape and Reel
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Bulk
Ammo
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
V_CES Collector-Emitter Voltage
V_CEO
V_EBO
I_C
T_J
T_STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
Storage Temperature
BC337
50
V
BC338
30
BC337
45
V
BC338
25
5
V
800
mA
150
°C
-55 to 150
°C
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.1.0
www.fairchildsemi.com