BC33716 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Switching and Amplifier Applications

BC337/338
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC327/BC328
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CES
Collector-Emitter Voltage
: BC337
: BC338
V_CEO
Collector-Emitter Voltage
: BC337
: BC338
V_EBO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
TO-92
1. Collector 2. Base 3. Emitter
Value
50
30
45
25
5
800
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
Collector-Emitter Breakdown Voltage
: BC337
: BC338
I_C=10mA, I_B=0
BV_CES
Collector-Emitter Breakdown Voltage
: BC337
: BC338
I_C=0.1mA, V_BE=0
BV_EBO
I_CES
h_FE1
h_FE2
V_CE (sat)
V_BE (on)
f_T
C_ob
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC337
: BC338
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I_E=0.1mA, I_C=0
V_CE=45V, I_B=0
V_CE=25V, I_B=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=300mA
I_C=500mA, I_B=50mA
V_CE=1V, I_C=300mA
V_CE=5V, I_C=10mA, f=50MHz
V_CB=10V, I_E=0, f=1MHz
Min.
45
25
50
30
5
100
60
Typ.
2
2
100
12
Max. Units
V
V
V
V
V
100 nA
100 nA
630
0.7
V
1.2
V
MHz
pF
h_FE Classification
Classification
h_FE1
h_FE2
16
100 ~ 250
60-
25
160 ~ 400
100-
40
250 ~ 630
170-
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002