BC32725BU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Switching and Amplifier Applications

BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CES
Collector-Emitter Voltage
: BC327
: BC328
V_CEO
Collector-Emitter Voltage
: BC327
: BC328
V_EBO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
TO-92
1. Collector 2. Base 3. Emitter
Value
-50
-30
-45
-25
-5
-800
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
Collector-Emitter Breakdown Voltage
: BC327
: BC328
I_C= -10mA, I_B=0
BV_CES
Collector-Emitter Breakdown Voltage
: BC327
: BC328
I_C= -0.1mA, V_BE=0
BV_EBO
I_CES
h_FE1
h_FE2
V_CE (sat)
V_BE (on)
f_T
C_ob
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC327
: BC328
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I_E= -10µA, I_C=0
V_CE= -45V, V_BE=0
V_CE= -25V, V_BE=0
V_CE= -1V, I_C= -100mA
V_CE= -1V, I_C= -300mA
I_C= -500mA, I_B= -50mA
V_CE= -1V, I_C= -300mA
V_CE= -5V, I_C= -10mA, f=20MHz
V_CB= -10V, I_E=0, f=1MHz
Min.
-45
-25
-50
-30
-5
100
40
Typ.
-2
-2
100
12
Max. Units
V
V
V
V
V
-100 nA
-100 nA
630
-0.7
V
-1.2
V
MHz
pF
h_FE Classification
Classification
h_FE1
h_FE2
16
100 ~ 250
60-
25
160 ~ 400
100-
40
250 ~ 630
170-
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002