BC237 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

BC237/238/239
Switching and Amplifier Applications
• Low Noise: BC239
NPN Epitaxial Silicon Transistor
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CES
Collector-Emitter Voltage
: BC237
: BC238/239
V_CEO
Collector-Emitter Voltage
: BC237
: BC238/239
V_EBO
Emitter-Base Voltage
: BC237
: BC238/239
I_C
P_C
T_J
T_STG
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
BV_CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC237
: BC238/239
Test Condition
I_C=2mA, I_B=0
BV_EBO
Emitter Base Breakdown Voltage
: BC237
: BC238/239
I_E=1µA, I_C=0
I_CES
h_FE
V_CE (sat)
V_BE (sat)
V_BE (on)
f_T
C_ob
C_ib
NF
Collector Cut-off Current
: BC237
: BC238/239
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Base Capacitance
Noise Figure
: BC237/238
: BC239
: BC239
V_CE=50V, V_BE=0
V_CE=30V, V_BE=0
V_CE=5V, I_C=2mA
I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
V_CE=5V, I_C=2mA
V_CE=3V, I_C=0.5mA, f=100MHz
V_CE=5V, I_C=10mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_EB=0.5V, I_C=0, f=1MHz
V_CE=5V, I_C=0.2mA,
f=1KHz R_G=2KΩ
V_CE=5V, I_C=0.2mA
R_G=2KΩ, f=30~15KHz
Value
50
30
45
25
6
5
100
500
150
-55 ~ 150
Min.
45
25
6
5
120
0.55
150
Typ.
0.2
0.2
0.07
0.2
0.73
0.87
0.62
85
250
3.5
8
2
Units
V
V
V
V
V
V
mA
mW
°C
°C
Max. Units
V
V
V
V
15
15
800
0.2
0.6
0.83
1.05
0.7
6
nA
nA
V
V
V
V
V
MHz
MHz
pF
pF
10
dB
4
dB
4
dB
h_FE Classification
Classification
h_FE
A
120 ~ 220
B
180 ~ 460
C
380 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002