BC212LB Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

BC212LB
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 68.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings* T_C=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
50
60
5
100
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
mA
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV_CEO Collector-Emitter Breakdown Voltage
BV_CBO Collector-Base Breakdown Voltage
BV_EBO
Emitter-Base Breakdown Voltage
I_CBO
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
On Characteristics*
I_C = 2mA
I_C = 10µA
I_E = 10µA
V_CB = 30V
V_EB = 4V
h_FE
DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage
V_BE(sat) Base-Emitter Saturation Voltage
V_BE(on) Base-Emitter On Voltage
Small Signal Characteristics
V_CE = 5V, I_C = 10µA
V_CE = 5V, I_C = 2mA
I_C = 100mA, I_B = 5mA
I_C = 100mA, I_B = 5mA
V_CE = 5V, I_C = 2mA
C_ob
Output Capacitance
h_FE
Small Signal Current Gain
NF
Noise Figure
* Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
V_CE = 10V, f = 1MHz
V_CE = 5V, I_C = 2mA, f = 1KHz
V_CE = 5V, I_C = 200µA, f = 1KHz
R_G = 2KΩ, BW = 200Hz
Min. Typ. Max. Units
50
V
60
V
5
V
15 nA
15 nA
40
60
0.6 V
1.4 V
0.6
0.72 V
6
pF
60
10 dB
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002