BC212L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

BC212L
B
C
E
TO-92
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300mA.
Sourced from Process 68.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
50
V_CBO
Collector-Base Voltage
60
V_EBO
Emitter-Base Voltage
5
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
300
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
R_θJC
R_θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
© ^{2000 Fairchild Semiconductor International}
Max
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
Rev. A 7/24/00