BC184C Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Silicon NPN Small Signal Transistor

BC184C
Silicon NPN Small Signal Transistor (Note 1)
• BV_CEO = 30V (Min.)
• h_FE = 130 (Min.) @V_CE = 5.0V, I_C = 100mA
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (T_a=25°C) (Note 2, 3)
Junction Temperature
Storage Temperature
1
TO-92
1. Collector 2. Base 3. Emitter
Value
45
30
5
500
350
150
- 55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
BV_CBO
Collector-Base Voltage
I_C = 10µA
45
BV_CEO
Collector-Emitter Voltage
I_C = 2mA
30
BV_EBO
Emitter-Base Voltage
I_E = 10µA
5
I_CBO
Collector Cut-off Current
V_CB = 30V
I_EBO
Emitter Cut-off Current
V_EB = 4V
h_FE
DC Current Gain
V_CE = 5V, I_C = 10µA
100
V_CE = 5V, I_C = 2mA
250
V_CE = 5V, I_C = 100mA
130
V_CE(sat)
Collector-Emitter Saturation Voltage
I_C = 10mA, I_B = 0.5mA
I_C = 100mA, I_B = 5mA
V_BE(sat)
Base-Emitter Saturation Voltage
I_C = 100mA, I_B = 5mA
V_BE(on)
Base-Emitter On Voltage
V_CE = 5V, I_C = 2mA
0.55
C_OB
Output Capacitance
V_CE = 10V, f = 1MHz
f_T
Current gain Bandwidth Product
V_CE = 5V, I_C = 10mA
150
f = 100MHz
h_FE
Small Signal Current Gain
V_CE = 5V, I_C = 2mA
240
f = 1KHz
NF
Noise Figure
V_CE = 5V, I_C = 200mA
R_G = 2KΩ, f = 30Hz ~ 15KHz
V_CE = 5V, I_C = 200µA,
f = 1KHz
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
Typ.
Max.
15
15
Units
V
V
V
nA
nA
800
0.6 V
0.25
1.2 V
0.7 V
5
pF
MHz
900
4
dB
4
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002