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| BC183LC Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN General purpose Amplifier | |||
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BC183LC
NPN General purpose Amplifier.
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
1
TO-92
1. Emitter 2. Collector 3. Base
Value
45
30
5
100
350
150
- 55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
COB
fT
hfe
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current gain Bandwidth Product
Small Signal Current Gain
IC = 10µA
IC = 2mA
IE = 10µA
VCB = 30V
VEB = 3V
VCE = 5V, IC = 10µA
VCE = 5V, IC = 2mA
VCE = 5V, IC = 100mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
IC = 100mA, IB = 5mA
VCE = 5V, IC = 2mA
VCE = 10V, f = 1MHz
VCE = 5V, IC = 10mA
VCE = 5V, IC = 2mA
f = 1KHz
NF
Noise Figure
VCE = 5V, IC = 200mA
RG = 2Kâ¦, f = 1KHz
Min. Typ. Max. Units
45
V
30
V
5
V
15 nA
15 nA
40
100
850
80
0.25 V
0.6
1.2 V
0.55
0.7 V
5
pF
150
MHz
450
900
10 dB
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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