BC183C Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifer

BC183C
NPN General Purpose Amplifer
June 2007
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_STG , T_J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (T_a=25°C)
Storage Junction Temperature Range
Value
45
30
6
100
350
- 55 ~ 150
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
C_OB
f_T
h_fe
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current gain Bandwidth Product
Small Signal Current Gain
I_C = 10μA
I_C = 2mA
I_E = 100μA
V_CB = 30V
V_EB = 4V
V_CE = 5V, I_C = 10μA
V_CE = 5V, I_C = 2.0mA
V_CE = 5V, I_C = 100mA
I_C = 10mA, I_B = 0.5mA
I_C = 100mA, I_B = 5.0mA
I_C = 100mA, I_B = 5mA
V_CE = 5V, I_C = 2mA
V_CE = 10V, f = 1.0MHz
V_CE = 5V, I_C = 10mA
V_CE = 5V, I_C = 2mA
f = 1KHz
45
30
6
40
120
80
0.55
150
450
NF
Noise Figure
V_CE = 5V, I_C = 200mA
R_G = 2KΩ, f = 1KHz
Units
V
V
V
mA
mW
°C
Max
15
15
800
0.25
0.6
1.2
0.7
5
900
10
Units
V
V
V
nA
nA
V
V
V
pF
MHz
dB
©2007 Fairchild Semiconductor Corporation
1
BC183C Rev. A
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