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| BC182B Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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BC182B
NPN General Purpose Amplifier
⢠This device is designed for general purpose amplifier application at
collector currents to 100mA.
⢠Sourced from process 10.
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Storage Junction Temperature Range
1
TO-92
1. Collector 2. Base 3. Emitter
Value
50
60
6
100
- 55 ~ 150
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter-Base Leakage Current
On Characteristics
IC = 2mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 50V, VBE = 0
VEB = 4V, IE = 0
50
V
60
V
6
V
15 nA
15 nA
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
Dynamic Characteristics
VCE = 5V, IC = 10µA
VCE = 5V, IC = 100mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
IC = 100mA, IB = 5mA
VCE = 5V, IC = 2mA
40
80
0.25 V
0.6
1.2 V
0.55
0.7 V
fT
Current Gain Bandwidth Product
VCE = 5V, IC = 10mA, f = 100MHz 150
Cob
Output Capacitance
VCE = 10V, IC = 0, f = 1MHz
hfe
Small Signal Current Gain
VCE = 5V, IC = 2mA, f = 1KHz
240
NF
Noise Figure
VCE = 5V, IC = 0.2mA
RS = 2Kâ¦, f = 1KHz, BW = 200Hz
MHz
5
pF
500
10 dB
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003
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