BAX16_08 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage General Purpose Diode

BAX16
High Voltage General Purpose Diode
April 2008
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
150
I_F(AV)
Average Rectified Forward Current
200
i_f
Recurrent Peak Forward Current
600
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 s
1
Pulse Width = 1.0 ms
4
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature
-65 to 200
175
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Notes:
1) These ratings are based on a maximum junction temperature of 200degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics * T_a = 25°C unless otherwise noted
Symbol
Parameter
Conditions
V_R
Breakdown Voltage
I_R = 100mA
V_F
Forward Voltage
I_F = 1.0mA
V_FP
Forward Voltage
I_F = 100mA
Pulse Width = 300ms
I_F = 200mA
I_R
Reverse Leakage
V_R = 50V
V_R = 50V, T_A = 150°C
V_R = 150V
V_R = 150V, T_A = 150°C
t_rr
Reverse Recovery Time
I_F = 30mA, I_R = 30mA,
I_rr = 1.0mA, R_L = 100W
Min.
180
Unit
V
mA
mA
A
A
°C
°C
Max.
0.65
1.3
1.5
25
25
100
100
120
Units
V
V
nA
mA
nA
mA
ns
© 2007 Fairchild Semiconductor Corporation
BAX16 Rev. 1.0.0
1
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