BAW62 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

BAW62
Small Signal Diode
December 2004
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
75
I_F(AV)
Average Rectified Forward Current
300
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
4.0
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature
* These ratings are limiting values above which the serviceability of the diode may be impaired.
-65 to +200
175
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
V_R
Breakdown Voltage
V_F
Forward Voltage
I_R
Reverse Leakage
C_T
Total Capacitance
t_rr
Reverse Recovery Time
I_R = 5µA
I_F = 5mA
I_F = 100mA
I_F = 100mA, T = 100°C
V_R = 20V
V_R = 20V, T_A = 150°C
V_R = 50V
V_R = 75V
V_R = 75V, T_A = 150°C
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA, I_rr = 1mA, R_L = 100Ω,
Min.
75
0.62
Unit
V
mA
A
A
°C
°C
Unit
mW
°C/W
Max
0.75
1.0
0.93
25
50
200
5
100
2
4
Units
V
V
V
V
nA
µA
nA
µA
µA
pF
ns
©2004 Fairchild Semiconductor Corporation
1
BAW62 Rev. A
www.fairchildsemi.com