BAW56 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

Discrete POWER & Signal
Technologies
BAW56
3
SOT-23
2
1
3
A1
1
2
CONNECTION DIAGRAMS
3
1
2
High Conductance Ultra Fast Diode
Sourced from Process 1P. See BAV99 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W_IV
I_O
I_F
if
i_f(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
70
200
600
700
1.0
2.0
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
BAW56
350
2.8
357
Units
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW/°C
°C/W
©1997 Fairchild Semiconductor Corporation