BAV99_11 Datasheet, PDF (1/4 Pages) Micro Commercial Components – 350mW 70Volt Dual Series Switching Diode

BAV99
Small Signal Diode
August 2011
3
2
1
SOT-23
3
A7
1
2
Connection Diagram
3
1
2
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 300 microseconds
70
V
200
mA
1.0
A
8.0
A
T_stg
Storage Temperature Range
T_j
Operating Junction Temperature
-55 to +150
°C
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
350
357
Units
mW
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
V_R
Breakdown Voltage
I_R = 100μA
V_F
Forward Voltage
I_F = 1.0mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
I_R
Reverse Leakage
V_R = 70V
V_R = 25V, T_A = 150°C
V_R = 70V, T_A = 150°C
C_T
Total Capacitance
V_R = 0V, f = 1.0MHz
t_rr
Reverse Recovery Time I_F = I_R = 10mA, I_RR = 1.0mA,
R_L = 100Ω
© 2011 Fairchild Semiconductor Corporation
BAV99 Rev. C1
1
Min.
70
Max.
715
855
1.0
1.25
2.5
30
50
1.5
6.0
Units
V
mV
mV
V
V
μA
μA
μA
pF
ns
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