BAV99WT1G Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Small Signal Diode

BAV99WT1G
Small Signal Diode
April 2005
SOT-323
3
FA
1
2
Connection Diagram
3
1
2
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature
Thermal Characteristics
Symbol
Parameter
P_D
R_θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
V_R
Breakdown Voltage
V_F
Forward Voltage
I_R
Reverse Leakage
C_T
Total Capacitance
t_rr
Reverse Recovery Time
I_R = 100µA
I_F = 1.0mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
V_R = 70V
V_R = 25V, T_A = 150°C
V_R = 70V, T_A = 150°C
V_R = 0V, f = 1.0MHz
I_F = I_R = 10mA, I_RR = 1.0mA,
R_L = 100Ω
Value
70
200
1.0
2.0
-65 to +150
150
Value
270
460
Min.
70
Unit
V
mA
A
A
°C
°C
Unit
mW
°C/W
Max
715
855
1.0
1.25
2.5
50
70
2.0
6.0
Units
V
mV
mV
V
V
µA
µA
µA
pF
ns
©2005 Fairchild Semiconductor Corporation
1
BAV99WT1G Rev. A
www.fairchildsemi.com