BAV99 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

BAV99
3
2
1
SOT-23
3
A7
1
2
Connection Diagram
3
12
Small Signal Diode
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM
I_F(AV)
I_FSM
T_stg
T_J
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
70
200
1.0
2.0
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
350
357
Units
V
mA
A
A
°C
°C
Units
mW
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_R
Breakdown Voltage
V_F
Forward Voltage
I_R
Reverse Current
C_T
Total Capacitance
t_rr
Reverse Recovery Time
I_R = 100 µA
I_F = 1.0 mA
I_F = 10 mA
I_F = 50 mA
I_F = 150 mA
V_R = 70 V
V_R = 25 V, T_A = 150°C
V_R = 70 V, T_A = 150°C
V_R = 0, f = 1.0 MHz
I_F = I_R = 10 mA, I_RR = 1.0 mA,
R_L = 100Ω
2001 Fairchild Semiconductor Corporation
Min
70
Max
715
855
1.0
1.25
2.5
30
50
1.5
6.0
Units
V
mV
mV
V
V
µA
µA
µA
pF
ns
BAV99, Rev. B