BAV23S_06 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Small Signal Diode

BAV23S
Small Signal Diode
September 2006
tm
3
2
1
SOT-23
3
L30
1
2
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient*
Connection Diagram
3
1
2
Value
250
200
9.0
3.0
-55 to +150
150
Unit
V
mA
A
A
°C
°C
Value
350
357
Unit
mW
°C/W
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
V_R
Breakdown Voltage
I_R = 100µA
V_F
Forward Voltage
I_F = 100mA
I_F = 200mA
I_R
Reverse Leakage
V_R = 250V
V_R = 250V, T_A = 150°C
t_rr
Reverse Recovery Time
I_F = I_R = 30mA, I_RR = 3.0mA,
R_L = 100Ω
Min.
250
Max
1.0
1.25
100
100
50
Units
V
V
V
nA
µA
ns
©2006 Fairchild Semiconductor Corporation
1
BAV23S Rev. E
www.fairchildsemi.com