BAV23S Datasheet, PDF (1/5 Pages) NXP Semiconductors – General purpose double diode

DISCRETE POWER AND SIGNAL
TECHNOLOGIES
BAV23S
HIGH VOLTAGE GENERAL PURPOSE DIODE
PD . . . .350 mW @ TA = 25 Deg C
BV . . . .250 V (MIN) @ IR = 100 uA
TRR . . . 50 nS @ IF=IR = 30 mA IRR = 3.0 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature
Operating Junction Temperature
150 Degrees C
150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
Derating Factor per Degree C
350 mW
2.8 mW
VOLTAGES & CURRENTS
V_RRM
Repetitive Peak Reverse Voltage
(Single Device)
V_RRM
Repetitive Peak Reverse Voltage
(Series Connection)
V_RWM Continuous Peak Reverse Voltage
(Single Device)
V_RWM Continuous Peak Reverse Voltage
(Series Connection)
IO
Average Rectified Current
IF
DC Forward Current
if
Recurrent Peak Forward Current
if (surge) Peak Forward Surge Current
Pulse Width = 1.0 microsec
Pulse Width = 100 microsec
Pulse Width = 10 millisec
250 V
500 V
200 V
400 V
200 mA
400 mA
700 mA
9.0 A
3.0 A
1.7 A
3
L30
1
2
PACKAGE
TO-236AB (Low)
(SOT-23)
CONNECTION DIAGRAMS
3
1
2
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM
CHARACTERISTICS
MIN MAX UNITS
TEST CONDITIONS
BV Breakdown Voltage
250
V
IR = 100 uA
IR
Reverse Current (single device)
Reverse Current (series connection)
VF
Forward Voltage (single device)
Forward Voltage (series connection)
TRR Reverse Recovery Time
100
nA
VR = 200 V
100
uA
VR = 200 V TA = +150 Deg C
100
nA
VR = 400 V
100
uA
VR = 400 V TA = +150 Deg C
1.00
V
IF = 100 mA
1.25
V
IF = 200 mA
2.00
V
IF = 100 mA
2.50
V
IF = 200 mA
50
nS
IF = IR = 30 mA
IRR = 3.0 mA RL = 100 ohms
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junction temperature of 150 degrees C and junction-to-ambient thermal resistance of 357 degrees C
per Watt. (Derating factor of 2.8 milliwatts per degree C)