BAV19_01 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Small Signal Diode

BAV19 / 20 / 21
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings* T = 25°C unless otherwise noted
A
Symbol
Parameter
Value
V_RRM
I_F(AV)
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
BAV19
120
BAV20
200
BAV21
250
200
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
4.0
T_stg
Storage Temperature Range
T_J
Operating Junction Temperature
-65 to +200
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Units
V
V
V
mA
A
A
°C
°C
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Units
mW
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_R
Breakdown Voltage
BAV19 I_R = 100 µA
BAV20 I_R = 100 _µA
BAV21 _{IR = 100 µA}
V_F
Forward Voltage
I_F = 100 mA
I_F = 200 mA
I_R
Reverse Current
V_R = 100 V
BAV19 V_R = 100 V, T_A = 150°C
V_R = 150 V
BAV20 V_R = 150 V, T_A = 150_°C
V_R = 200 V
BAV21 _{VR = 200 V, TA = 150°C}
C_T
Total Capacitance
V_R = 0, f = 1.0 MHz
t_rr
Reverse Recovery Time
I_F = I_R = 30 mA, I_RR = 3.0 mA,
R_L = 100Ω
Min
120
200
250
Max
1.0
1.25
100
100
100
100
100
100
5.0
50
Units
V
V
V
V
V
nA
µA
nA
µA
nA
µA
pF
ns
2001 Fairchild Semiconductor Corporation
BAV19/20/21, Rev. C