BAT43XV2 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Schottky Barrier Diodes

BAT42XV2-BAT43XV2
Schottky Barrier Diodes
Features
• Low Forward Voltage Drop
• Flat Lead, Surface Mount Device at 0.60mm Height
• Extremely Small Outline Plastic Package SOD523F
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Cathode
Anode
ELECTRICAL SYMBOL
BAT42XV2 Marking : 6B
BAT43XV2 Marking : 7B
January 2010
SOD-523F
Band Indicates Cathode
Absolute Maximum Ratings * T_A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_RRM
Maximum Repetitive Reverse Voltage
30
V
V_R
Maximum DC Blocking Voltage
30
V
I_F(AV)
Average Rectified Forward Current
200
mA
I_FSM
Peak Forward Surge Current
4
A
T_J
Operating Junction Temperature
+125
°C
T_STG
Storage Temperature Range
-65 to +125
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
P_D
R_θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB minimum land pad.
200
mW
500
°C/W
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_R Breakdown Voltage
I_R=100μA
I_R Reverse Leakage Current
V_R=25V
V_F Forward Voltage
BAT42XV2 I_F=10mA
I_F=50mA
BAT43XV2 I_F=2mA
I_F=15mA
BAT42XV2, BAT43XV2 I_F=200mA
T_RR Reverse Recovery Time
I_F=I_R=10mA
R_L=100Ω
I_RR=1mA
C Capacitance
V_R=1V, f=1MHz
© 2009 Fairchild Semiconductor Corporation
BAT42XV2-BAT43XV2 Rev. A1
1
Min.
30
0.26
Typ.
5
7
Max.
500
0.40
0.65
0.33
0.45
1.0
Units
V
nA
V
nS
pF
www.fairchildsemi.com