BAS70SV_11 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – 70V Dual Schottky Barrier Diodes

BAS70SV
70V Dual Schottky Barrier Diodes
February 2011
Features
• Low Forward Voltage Drop
• Low Capacitance
• Low Leakage Current
• Fast Switching
• Ultra Small Surface Mount Package
• Lead Free By Design / RoHS Compliant
• Green Compound
• 0.6mm Max Package Height
C1
A2
(Pin1)
SOT-563F
BAS70SV Marking : AD
A1
C2
ELECTRICAL SYMBOL
Note : Pinouts are symmetrical. Pin 1 & 4 are interchangeable.
The placement of the device in the carrier tape can be of either orientation.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Forward Surge Current
(8.3mS Single Half Sine Wave)
70
V
70
mA
2.5
A
P_D
Power Dissipation
200
mW
T_J, T_STG Operating Junction and Storage Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
R_θJA
Thermal Resistance, Junction to Ambient *
* Device mounted on board compliant to JESD51-2 and JESD51-3 standards.
Value
625
Units
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_R
Breakdown Voltage
I_R = 100μA
I_R
Reverse Current
V_R = 50V
V_R = 70V
V_F
Forward Voltage
I_F = 1mA
I_F = 15mA
T_rr
Reverse Recovery Time I_F = I_R = 10mA, I_rr = 0.1I_R
Cap
Capacitance
V_R = 0V, f = 1MHz
Min.
70
Typ.
93
0.02
365
855
1.55
1.62
Max.
0.1
2.5
410
1000
8
3
Units
V
μA
μA
mV
mV
nS
pF
© 2011 Fairchild Semiconductor Corporation
BAS70SV Rev. A0
1
www.fairchildsemi.com