BAS70SL Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Schottky Barrier Diodes

BAS70SL
Schottky Barrier Diodes
Features
• Low Forward Voltage Drop
• Fast switching
• Very Small and Thin SMD package
• Profile height, 0.43mm max
• Footprint, 1.0 x 0.6 mm
1
Connection Diagram
2
2
SOD-923
Marking: AC
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Forward Surge Current
( 8.3mS Single Half Sine-Wave)
P_D
T_J, T_STG
Power Dissipation
Operating Junction & Storage Temperature Range
* These ratings are limiting values above which the serviceability of the diode may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction to Ambient *
* Minimum land pad.
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_R
Breakdown Voltage
I_R = 100μA
V_F
Forward Voltage
I_F = 1mA
I_F = 15mA
I_R
Reverse Leakage
V_R = 50V
trr
Reverse Recovery Time
I_F = I_R= 10mA, irr= 0.1I_R
C_j
Junction Capacitance
V_R = 0, f = 1.0MHz
1
Value
70
70
100
227
-55 to +150
Value
550
Min.
70
Max.
410
1000
0.2
8.0
3.0
December 2007
Unit
V
mA
mA
mW
°C
Unit
°C/W
Unit
V
mV
mV
μA
nS
pF
© 2007 Fairchild Semiconductor Corporation
BAS70SL Rev. 1.0.0
1
www.fairchildsemi.com