BAS40SL_10 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Schottky Barrier Diodes

BAS40SL
Schottky Barrier Diodes
Features
• Low Forward Voltage Drop
• Fast switching
• Very Small and Thin SMD package
• Profile height, 0.43mm max
• Footprint, 1.0 x 0.6mm
1
2
SOD-923F
Marking: AA
Connection Diagram
2
1
October 2010
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM Maximum Repetitive Reverse Voltage
40
I_F(AV) Average Rectified Forward Current
100
I_FSM
Forward Surge Current
600
(8.3mS Single Half Sine-Wave)
P_D
Power Dissipation
227
T_J, T_STG Operating Junction & Storage Temperature Range
-55 to +150
* These ratings are limiting values above which the serviceability of the diode may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction to Ambient *
* Minimum land pad.
Value
550
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
V_R
Breakdown Voltage
I_R = 10μA
40
V_F
Forward Voltage
I_F = 1mA
I_F = 40mA
I_R
Reverse Leakage
V_R = 30V
trr
Reverse Recovery Time I_F = I_R= 10mA, irr = 0.1I_R
C_j
Junction Capacitance V_R = 0, f = 1.0MHz
Max.
380
1000
0.2
8.0
5.0
© 2010 Fairchild Semiconductor Corporation
BAS40SL Rev. A2
1
Unit
V
mA
mA
mW
°C
Unit
°C/W
Unit
V
mV
mV
μA
nS
pF
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