BAS29 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose controlled avalanche double diodes

BAS29
3
2
1
SOT-23
3
L20
1
2
Connection Diagram
3
1 2NC
Small Signal Diode
Absolute Maximum Ratings* T = 25°C unless otherwise noted
A
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
120
I_F(AV)
Average Rectified Forward Current
200
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
2.0
T_stg
Storage Temperature Range
-55 to +150
T_J
Operating Junction Temperature
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Units
V
mA
A
A
°C
°C
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
350
357
Units
mW
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
V_R
V_F*
Parameter
Breakdown Voltage
Forward Voltage
I_R*
Reverse Current
C_T
Total Capacitance
t_rr
Reverse Recovery Time
*Pulse test : Pulse width=300us, Duty Cycle=2%
2002 Fairchild Semiconductor Corporation
Test Conditions
I_R = 1.0 mA
I_F = 10 mA
I_F = 50 mA
I_F = 100 mA
I_F = 200 mA
I_F = 400 mA
V_R = 90 V
V_R = 90 V, T_A = 150°C
V_R = 0, f = 1.0 MHz
I_F = I_R = 30 mA, I_RR = 3.0 mA,
R_L = 100 Ω
Min
120
Max
0.75
0.84
0.90
1.00
1.25
100
100
2.0
50
Units
V
V
V
V
V
V
nA
µA
pF
ns
BAS29, Rev. A