BAS20_08 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – General Purpose High Voltage Diode

BAS20
General Purpose High Voltage Diode
April 2008
3
2
1
SOT-23
3
A81.
1
2
MARKING
Connection Diagram
3
1 2.NC
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Value
200
200
1.0
2.0
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
Parameter
P_D
R_qJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
350
357
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_R
Breakdown Voltage
V_F
Forward Voltage
I_R
Reverse Leakage
C_T
Total Capacitance
t_rr
Reverse Recovery Time
I_R = 100mA
I_F = 100mA
I_F = 200mA
V_R =50V
V_R =50V, T_A = 150°C
V_R = 0V, f = 1.0MHz
I_F = I_R =30mA,
I_RR = 3.0mA, R_L = 100W
Min.
200
Max.
1.0
1.25
100
100
5
50
Units
V
mA
A
A
°C
°C
Units
mW
°C/W
Units
V
V
V
nA
mA
pF
ns
© 2007 Fairchild Semiconductor Corporation
BAS20 Rev. 1.0.0
1
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