BAS19 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diodes

BAS19
3
2
1
SOT-23
3
A8.
1
2
Connection Diagram
3
1 2NC
Small Signal Diode
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
120
I_F(AV)
Average Rectified Forward Current
200
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
2.0
T_stg
Storage Temperature Range
T_J
Operating Junction Temperature
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
350
357
Units
V
mA
A
A
°C
°C
Units
mW
°C/W
Electrical Characteristics
Symbol
V_R
V_F
Parameter
Breakdown Voltage
Forward Voltage
I_R
Reverse Current
C_T
Total Capacitance
t_rr
Reverse Recovery Time
T = 25°C unless otherwise noted
A
Test Conditions
I_R = 100 µA
I_F = 100 mA
I_F = 200 mA
V_R = 100 V
V_R = 100 V, T_A = 150°C
V_R = 0, f = 1.0 MHz
I_F = I_R = 30 mA, I_RR = 3.0 mA,
R_L = 100 Ω
Min
120
Max
1.0
1.25
0.1
100
5.0
50
Units
V
V
V
µA
µA
pF
ns
2002 Fairchild Semiconductor Corporation
BAS19, Rev. A