BAS16HT1G_10 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Small Signal Diode

BAS16HT1G
Small Signal Diode
SOD-323
1
A1
2
March 2010
Connection Diagram
1
2
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
85
I_F(AV)
Average Rectified Forward Current
200
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
600
T_STG
Storage Temperature Range
-65 to +150
T_J
Operating Junction Temperature
-55 to +150
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Units
V
mA
mA
°C
°C
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
Parameter
Value
Units
P_D
R_θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
200
mW
600
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_R
Breakdown Voltage
I_R = 5.0μA
V_F
Forward Voltage
I_F = 0.1mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
I_R
Reverse Leakage
V_R = 75V
V_R = 25V, T_A = 150°C
V_R = 75V, T_A = 150°C
C_T
Total Capacitance
V_R = 0, f = 1.0MHz
t_rr
Reverse Recovery Time I_F = I_R = 10mA, I_RR = 1.0mA,
R_L = 100Ω
Min.
85
Max.
715
855
1.0
1.25
1.0
30
50
2.0
6.0
Units
V
mV
mV
V
V
μA
μA
μA
pF
ns
© 2010 Fairchild Semiconductor Corporation
BAS16HT1G Rev. A1
1
www.fairchildsemi.com