AN-5232 Datasheet, PDF (1/15 Pages) Fairchild Semiconductor – New Generation Super-Junction MOSFETs

www.fairchildsemi.com
AN-5232
New Generation Super-Junction MOSFETs, SuperFET^® II and
SuperFET^® II Easy Drive MOSFETs for High Efficiency and
Lower Switching Noise
Introduction
Power MOSFET technology has developed toward higher
cell density for lower on-resistance. The super-junction
device utilizing charge balance theory was introduced to
semiconductor industry ten years ago and it set a new
benchmark in the high-voltage power MOSFET market^[1].
The Super-Junction (SJ) MOSFETs enable higher power
conversion efficiency. However, the extremely fast
switching performance of super-junction MOSFETs creates
unwanted side effects, like high voltage or current spikes or
poor EMI performance. Based on recent system trends,
improving efficiency is a critical goal and using a slow
switching device just for EMI is not an optimized solution.
Fairchild recently added a SuperFET^® II MOSFET family
using the latest super-junction technology to the high-
voltage power MOSFET portfolio. With this technology,
Fairchild provides high performance in high-end, AC-DC
SMPS applications such as servers, telecom, computing,
industrial power supply, UPS/ESS, solar inverter, and
lighting applications; as well as consumer electronics, which
require high power density, system efficiency, and
reliability. Utilizing an advanced charge-balance
technology, Fairchild helps designers achieve more efficient
and high-performance solutions that consume less board
space and improve EMI and reliability by introducing the
600 V N-channel SuperFET^® II MOSFET family.
Planar MOSFET
Super-Junction MOSFET Technology
The R_DS(ON) × Q_G, Figure Of Merit (FOM) is generally
considered the single most-important indicator of MOSFET
performance in Switching-Mode Power Supplies (SMPS).
Therefore, several new technologies have been developed to
improve the R_DS(ON) × Q_G FOM. Figure 1 shows vertical
structure and electric field profile of a planar MOSFET and
a super-junction MOSFET. Breakdown voltage of the planar
MOSFET is determined by drift doping and its thickness.
The slope of electric field distribution is proportional to drift
doping. Therefore, thick and lightly doped epi is needed to
support higher breakdown voltage.
Super-Junction MOSFET
Figure 1. Vertical Structure and Electric Field Profile
of Power MOSFETs
© 2013 Fairchild Semiconductor Corporation
Rev. 1.0.2 • 9/25/13
www.fairchildsemi.com