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| 699440 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – High Voltage Power Darlington Transistor | |||
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699440
High Voltage Power Darlington Transistor
Features
⢠Built-in Resistor at Base-Emitter: R1(Typ.) = 2000â¦
⢠Built-in Resistor at Base: RB(Typ.) = 700±100â¦
Equivalent Circuit
C
1
TO-220
1.Base 2.Collector 3.Emitter
B
RB
R1
R1 â
2000â¦
RB â
700â¦
E
Absolute Maximum Ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Value
600
275
10
4
6
0.5
40
150
-55 ~ 150
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BVCBO
BVCER
BVCEO(sus)
BVEBO
ICBO
IEBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE(sat)
VBE(sat)
Cob
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capatitance
IC = 500µA, IE = 0
IC = 1mA, RBE = 330â¦
IC = 1.5A, IB = 50mA, L = 25mH
IE = 500µA, IC = 0
VCB = 600V, IE = 0
VEB = 10V, IC = 0
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
IC = 3A, IB = 20mA
IC = 2A, IB = 5mA
VE = 10V, IE = 0, f = 1MHz
Min.
600
600
275
10
1000
1000
Typ.
110
Units
V
V
V
A
A
A
W
°C
°C
Max
0.1
0.1
5000
Units
V
V
V
V
mA
mA
1.5
V
6.0
V
pF
©2004 Fairchild Semiconductor Corporation
1
699440 Rev. A
www.fairchildsemi.com
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