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| 495220TU Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Darlington Transistor | |||
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495220
NPN Epitaxial Silicon Darlington Transistor
High Voltage & Medium Power Linear Application
Equivalent Circuit
C
April 2008
B
1
TO-220
Marking : 495220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings * TC=25°C unless otherwise noted
Symbol
Parameter
Value
BVCBO
Collector-Base Voltage
550
BVCEO
Collector-Emitter Voltage
325
BVEBO
Emitter-Base Voltage
10
IC
Collector Current (DC)
4
ICP
Collector Current (Pulse)**
6
IB
Base Current (DC)
0.5
PC
Collector Dissipation(TC=25°C)
40
TJ
Junction Temperature
150
TSTG
Storage Junction Temperature Range
- 55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test : Pulse Width ⤠5ms, Duty Cycle ⤠10%
E
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics * TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO(SUS) Collector-Emitter Sustaining Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
* Pulse Test : Pulse Width ⤠5ms, Duty Cycle ⤠10%
IC=1.5A, IB = 0.05A, L = 25mH
VCB = 550V, IE = 0
VEB=10V, IC=0
VCE=5V, IC=0..5A
VCE=5V, IC=3.0A
IC = 0.75A, IB = 0.17A
IC = 2A, IB = 5mA
IC = 2A, IB = 5mA
Min.
250
5000
1000
Typ.
Max. Units
V
5
mA
1
mA
1.7
V
1.5
V
2
V
© 2008 Fairchild Semiconductor Corporation
495220 Rev. A1
1
www.fairchildsemi.com
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