2SC5242 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)

2SC5242/FJA4313
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: I_C = 15A
• High Power Dissipation : 130watts
• High Frequency : 30MHz.
• High Voltage : V_CEO=230V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SA1962/FJA4213.
• Thermal and electrical Spice models are available
• Same transistor is also available in:
--TO264 package, 2SC5200/FJL4315 : 150 watts
--TO220 package, FJP5200 : 80 watts
--TO220F package, FJPF5200 : 50 watts
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
BV_CBO
BV_CEO
BV_EBO
I_C
I_B
P_D
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Total Device Dissipation(T_C=25°C)
Derate above 25°C
T_J, T_STG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T_a=25°C unless otherwise noted
Symbol
Parameter
R_θJC
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
h_FE Classification
Classification
h_FE1
R
55 ~ 110
© 2008 Fairchild Semiconductor Corporation
2SC5242/FJA4313 Rev. A3
1
July 2008
1
TO-3P
1.Base 2.Collector 3.Emitter
Ratings
230
230
5
15
1.5
130
1.04
- 50 ~ +150
Units
V
V
V
A
A
W
W/°C
°C
Max.
0.96
Units
°C/W
O
80 ~ 160
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