2N7052_01 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – NPN Darlington Transistor

Discrete POWER & Signal
Technologies
2N7052
2N7053
NZT7053
C
BE
TO-92
C
BE
TO-226
C
SOT-223
E
C
B
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
100
V_CBO
Collector-Base Voltage
100
V_EBO
Emitter-Base Voltage
12
I_C
Collector Current - Continuous
1.5
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
2N7052
2N7053
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
625
1,000
5.0
8.0
83.3
125
RθJA
Thermal Resistance, Junction to Ambient
200
50
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
*NZT7053
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation