2N7051 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

2N7051
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
• Sourced from Process 06.
• See 2N7052 for Characteristics.
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T_A=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
T_J, T_STG
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
100
100
12
1.5
-55 ~ 150
NOTES:
1. These rtings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV_CEO
Collector-Emitter Breakdown Voltage *
BV_CBO
Collector-Base Breakdown Voltage
BV_EBO
Emitter-Base Breakdown Voltage
I_CBO
Collector Cut-off Current
I_CES
I_EBO
Emitter Cut-off Current
On Characteristics *
I_C = 1.0mA, I_B = 0
I_C = 100µA, I_B = 0
I_E = 1.0mA, I_C = 0
V_CB = 80V, I_E = 0
V_CE = 80V, I_E = 0
V_EB = 7.0V, I_C = 0
h_FE
DC Current Gain
V_CE (sat) Collector-Emitter Saturation Voltage
V_BE (sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
V_CE = 5.0V, I_C = 100mA
V_CE = 5.0V, I_C = 1.0A
I_C = 100mA, I_B = 0.1mA
I_C = 100mA, V_BE =5.0V
f_T
Transition Frequency
h_fe
Small Signal Current Gain
I_C = 100mA, V_CE =5.0V
V_CE =5.0V, I_C = 100mA,
f = 20MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Min. Typ. Max. Units
100
V
100
V
12
V
0.1
µA
0.2
µA
0.1
µA
10,000
1,000
20,000
1.5
V
2.0
V
200
MHz
10
100
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002